GaSb Thermophotovoltaic Cells Grown on GaAs Substrate Using the Interfacial Misfit Array Method
نویسندگان
چکیده
We present gallium antimonide (GaSb) p–i–n photodiodes for use as thermophotovoltaic (TPV) cells grown on gallium arsenide (100) substrates using the interfacial misfit array method. Devices were grown using molecular beam epitaxy and fabricated using standard microfabrication processes. X-ray diffraction was used to measure the strain, and current–voltage (I–V) tests were performed to determine the photovoltaic properties of the TPV cells. Energy generation at low efficiencies was achieved, and device performance was critically analyzed.
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